Hot Electron Modelling of HEMTs

Graphene Hot-electron Transistors

Hot-electron spectroscopy of GaAs.

We report results both experimental and theoretical on the dynamics of hot electron transport in GaAs. Total elastic and inelastic scattering rates are calculated and compared with the results of a new experimental technique "Hot Electron Spectroscopy". The magnetic field dependence of hot electron spectra has been studied. It is shown that application of a magnetic field normal to the injectio...

Electron-Electron Bremsstrahlung in a Hot Plasma

Using the differential cross section for electron-electron (e-e) bremsstrahlung exact to lowestorder perturbation theory the bremsstrahlung spectra and the total rate of energy loss of a hot electron gas are calculated. The results are compared to the nonrelativistic and extreme-relativistic approximations available and to previous work. The e-e contribution to the bremsstrahlung emission of a ...

Hot-electron Instability in Superconductors

High flux velocities in a superconductor can distort the quasiparticle distribution function and elevate the electronic temperature. Close to Tc, a non-thermal distribution function shrinks the vortex core producing the well-known Larkin-Ovchinnikov flux instability. In the present work we consider the opposite limit of low temperatures, where electron-electron scattering is more rapid than ele...

Hot-Electron Degradation of Bipolar Transistors

Hot-electron degradation of a bipolar transistor occurs when the transistor's emitterbase junction is reverse biased. Hot carriers generated by high electric fields in this junction create interface states and other defects that degrade a transistor's forwardbias current gain. This thesis aims to give the most precise microscopic description to date of reverse-bias stress of bipolar transistors...